Central Semiconductor 2N6668 PBFREE BJTs - Bipolar Transistors PNP Pwr Darlington

Technology: Si

Unit Weight: 2.300 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 65 W

DC Current Gain hFE Max: 20000

Gain Bandwidth Product fT: 20 MHz

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 10 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 1000

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 2 V