Central Semiconductor 2N6520 PBFREE BJTs - Bipolar Transistors . .

Unit Weight: 206 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 200

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 350 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 350 V

Collector-Emitter Saturation Voltage: 1 V