Central Semiconductor 2N6428 TIN/LEAD BJTs - Bipolar Transistors NPN 60Vcbo 50Vceo 6.0Vebo 200mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 650 at 100 uA, 5 V

Gain Bandwidth Product fT: 700 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 250 at 10 uA, 5 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 200 mV