Central Semiconductor 2N5551 TRA TIN/LEAD BJTs - Bipolar Transistors NPN 180Vcbo 160Vceo 6.0Vebo 600mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 250 at 5 V, 10 mA

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 180 V

Continuous Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50 at 10 V, 1 mA

Collector- Emitter Voltage VCEO Max: 160 V

Collector-Emitter Saturation Voltage: 200 mV