Central Semiconductor 2N5401 TIN/LEAD BJTs - Bipolar Transistors PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 240 at 10 mA, 5 V

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 160 V

Continuous Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50 at 1 mA, 5 V

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 200 mV