Central Semiconductor 2N5365 TIN/LEAD BJTs - Bipolar Transistors Through-Hole Transis tor-Small Signal (<
Model2N5365 TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 120 at 1 V, 50 mA
Emitter- Base Voltage VEBO: 4 V
Collector- Base Voltage VCBO: 40 V
DC Collector/Base Gain hfe Min: 40 at 1 V, 50 mA
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 250 mV
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