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Central Semiconductor 2N5365 PBFREE BJTs - Bipolar Transistors Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 120 at 1 V, 50 mA

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 40 V

DC Collector/Base Gain hfe Min: 40 at 1 V, 50 mA

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 250 mV

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