Central Semiconductor 2N5225 TIN/LEAD BJTs - Bipolar Transistors NPN 25Vcbo 25Vceo 4.0Vebo 100mA 20pF
Model2N5225 TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 600 at 10 V, 50 mA
Gain Bandwidth Product fT: 50 MHz
Emitter- Base Voltage VEBO: 4 V
Collector- Base Voltage VCBO: 25 V
DC Collector/Base Gain hfe Min: 30 at 10 V, 50 mA
Collector-Emitter Saturation Voltage: 800 mV
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