Central Semiconductor 2N5210 APP TIN/LEAD BJTs - Bipolar Transistors NPN 50Vceo 50Vcbo 4.5Vebo 50mA 350mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 600 at 5 V, 100 uA

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 4.5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 250 at 5 V, 1 mA

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 700 mV