Central Semiconductor 2N5202 PBFREE BJTs - Bipolar Transistors NPN 100Vcbo 75Vcer 50Vceo 6.0Vebo 35W

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 35 W

DC Current Gain hFE Max: 100 at 4 A, 1.2 V

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 4 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 10 at 4 A, 1.2 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 1.2 V