Central Semiconductor 2N4899 TIN/LEAD BJTs - Bipolar Transistors PNP 1.0A 25W 60Vcbo 60Vceo 0.6V
Model2N4899 TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 25 W
DC Current Gain hFE Max: 150
Gain Bandwidth Product fT: 3 MHz
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 1 A
DC Collector/Base Gain hfe Min: 20
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 600 mV
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