Central Semiconductor 2N3395 TIN/LEAD BJTs - Bipolar Transistors NPN 25Vcbo 25Vceo 5.0Vebo 100mA 360mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 360 mW

DC Current Gain hFE Max: 500 at 4.5 V, 2 mA

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 25 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 150 at 4.5 V, 2 mA

Collector- Emitter Voltage VCEO Max: 25 V