Central Semiconductor 2N1711 TIN/LEAD BJTs - Bipolar Transistors NPN 75Vcbo 50Vceo 7.0Vebo 25pF
Model2N1711 TIN/LEAD
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 800 mW
DC Current Gain hFE Max: 300
Gain Bandwidth Product fT: 70 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 75 V
Continuous Collector Current: 500 mA
Maximum Operating Temperature: + 175 C
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 1 V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts