Central Semiconductor 2N1480 TIN/LEAD BJTs - Bipolar Transistors 25Vcbo 25Vceo 5.0Vebo 100mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 5 W

DC Current Gain hFE Max: 60 at 200 mA, 4 V

Gain Bandwidth Product fT: 1.5 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 1.5 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 200 mA, 4 V

Collector- Emitter Voltage VCEO Max: 55 V

Collector-Emitter Saturation Voltage: 1.4 V