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CEL UPA814T-T1-A RF Bipolar Small Signal NPN High Frequency

ModelUPA814T-T1-A
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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Transistor Polarity: NPN

Pd - Power Dissipation: 110 mW

DC Current Gain hFE Max: 160

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 100 mA

DC Collector/Base Gain hfe Min: 80

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