CEL CE3521M4 RF JFET Transistors 20GHz NF .70dB Ga 11.9dB -55C +125C
ManufacturerCEL(View more products from this manufacturer)
ModelCE3521M4
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Gain: 11.9 dB
Technology: GaAs
Unit Weight: 4.528 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: pHEMT
NF - Noise Figure: 0.7 dB
Operating Frequency: 20 GHz
Pd - Power Dissipation: 125 mW
Gate-Source Cutoff Voltage: - 750 mV
Id - Continuous Drain Current: 10 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 47 mS
Vgs - Gate-Source Breakdown Voltage: - 3 V
Vds - Drain-Source Breakdown Voltage: 3 V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts