Bourns TISP61089BDR-S Dual Forward Conducting P-Gate Thyristors Dual P Gate Forward Conducting

Width: 4 mm

Height: 1.55 mm

Length: 5 mm

Compliance: UL

Unit Weight: 80 mg

Current Rating: 5 uA

Mounting Style: SMD/SMT

Vf - Forward Voltage: 3 V

Breakover Voltage VBO: - 112 V

Holding Current Ih Max: - 150 mA

Breakover Current IBO Max: 6.5 A

Gate Trigger Current - Igt: 5 mA

Gate Trigger Voltage - Vgt: 2.5 V

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Non Repetitive On-State Current: 6.5 A

Off-State Leakage Current @ VDRM IDRM: 5 uA

Rated Repetitive Off-State Voltage VDRM: - 170 V