Analog Devices SSM2212CPZ-R7 BJTs - Bipolar Transistors Low Noise,Matched Dual NPN Transistor

Technology: Si

Unit Weight: 20.700 mg

Configuration: Dual

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Transistor Polarity: NPN

DC Current Gain hFE Max: 2400 at 1 mA, 15 V, 2400 at 1 mA, 15 V

Gain Bandwidth Product fT: 200 MHz

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 20 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

DC Collector/Base Gain hfe Min: 300 at 1 mA, 15 V, 300 at 1 mA, 15 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 50 mV