Advanced Semiconductor, Inc. MRF5943 RF Bipolar Power RF Transistor
ModelMRF5943
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Technology: Si
Unit Weight: 506.600 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar Power
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
Gain Bandwidth Product fT: 1.3 GHz
Emitter- Base Voltage VEBO: 3.5 V
Continuous Collector Current: 400 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 25
Collector- Emitter Voltage VCEO Max: 30 V
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