Advanced Semiconductor, Inc. MRF587 RF Bipolar Power RF Transistor
ModelMRF587
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Technology: Si
Unit Weight: 12.171 g
Mounting Style: Through Hole
Transistor Type: Bipolar Power
Operating Frequency: 500 MHz
Transistor Polarity: NPN
Pd - Power Dissipation: 5 W
Emitter- Base Voltage VEBO: 2.5 V
Continuous Collector Current: 200 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 50
Collector- Emitter Voltage VCEO Max: 17 V
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