Advanced Semiconductor, Inc. MRF555T RF Bipolar Small Signal RF Transistor
ModelMRF555T
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Technology: Si
Unit Weight: 428.182 mg
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 470 MHz
Transistor Polarity: NPN
Pd - Power Dissipation: 3 W
Emitter- Base Voltage VEBO: 3 V
Continuous Collector Current: 500 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 50
Collector- Emitter Voltage VCEO Max: 16 V
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