Advanced Semiconductor, Inc. BLV33 RF Bipolar Power RF Transistor
ModelBLV33
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Mounting Style: Through Hole
Transistor Type: Bipolar Power
Operating Frequency: 224 MHz
Transistor Polarity: NPN
Pd - Power Dissipation: 132 W
Emitter- Base Voltage VEBO: 4 V
Continuous Collector Current: 12.5 A
Maximum DC Collector Current: 20 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 15
Collector- Emitter Voltage VCEO Max: 33 V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts