Advanced Linear Devices ALD1110EPAL MOSFET Dual EPAD(R) Prog
ModelALD1110EPAL
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Technology: Si
Unit Weight: 1 g
Channel Mode: Depletion
Configuration: Quad
Mounting Style: Through Hole
Transistor Type: 4 N-Channel
Number of Channels: 4 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 600 mW
Id - Continuous Drain Current: 3 A
Maximum Operating Temperature: + 70 C
Minimum Operating Temperature: 0 C
Rds On - Drain-Source Resistance: 500 Ohms
Vds - Drain-Source Breakdown Voltage: 10 V
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