Advanced Linear Devices ALD1102BSAL MOSFETs Dual N-Ch FET 10.6 500mW 0.7V 10Ohm
ModelALD1102BSAL
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Technology: Si
Unit Weight: 74 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 P-Channel
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 500 mW
Id - Continuous Drain Current: 16 mA
Rds On - Drain-Source Resistance: 270 Ohms
Vds - Drain-Source Breakdown Voltage: 10.6 V
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